| 2D | two-dimensional |
| 3D | three-dimensional |
| BPA | Board on Physics and Astronomy |
| CAM | content addressable memory |
| CMMRC | Condensed Matter and Materials Research Committee |
| CMOS | complementary metal-oxide-semiconductor |
| DAC | digital-to-analog converter |
| DIB | droplet-interface bilayer |
| DNN | deep neural network |
| DRAM | dynamic random access memory |
| EEG | electroencephalogram |
| EELS | electron energy loss spectroscopy |
| FET | field effect transistor |
| FIB | focused ion beam |
| GPU | graphic processing unit |
| HAADF | high-angle annular dark-field |
| HITP | hexaiminotriphenylene |
| MNIST | modified National Institute of Standards and Technology database |
| MOF | metalorganic framework |
| NDR | negative differential resistance |
| NIST | National Institute of Standards and Technology |
| OLED | organic light-emitting diode |
| ORNL | Oak Ridge National Laboratory |
| PCM | phase change material |
| R&D | research and development |
| RRAM | resistive random access memory |
| STEM | scanning transmission electron microscopy |
| TEM | transmission electron microscopy |
| VCM | valence change memory |
| VMM | vector-by-matrix multiplication |
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